STGB6NC60HDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB6NC60HDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW19030466
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 15A 62500mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB6NC60HDT4 Specifications

Attribute	Attribute Value

Part Number	STGB6NC60HDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW19030466
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	15.0 A
Polarity	N-Channel
Power Dissipation	62500 mW
Rise Time	5.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	21 ns
Input Power (Max)	56 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62500 mW
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Size-Width	9.35 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGB6NC60HDT4 IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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