STGB7NC60HDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB7NC60HDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW26390708
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB7NC60HDT4 Specifications

Attribute	Attribute Value

Part Number	STGB7NC60HDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW26390708
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	14.0 A
Polarity	N-Channel
Power Dissipation	25 W
Rise Time	8.50 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	80 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80000 mW
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Size-Width	9.35 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure STGB7NC60HDT4 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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