STGD10HF60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD10HF60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW54463083
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD10HF60KD Specifications

Attribute	Attribute Value

Part Number	STGD10HF60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW54463083
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Dissipation	62500 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	50 ns
Input Power (Max)	62.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62500 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Use the STGD10HF60KD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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