STGD10NC60KDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD10NC60KDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13375896
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 20A 62000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD10NC60KDT4 Specifications

Attribute	Attribute Value

Part Number	STGD10NC60KDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13375896
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	62 W
Polarity	N-Channel
Power Dissipation	60 W
Rise Time	6.50 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	62 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This STGD10NC60KDT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 62000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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