STGD3HF60HDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD3HF60HDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW19004703
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 7.5A 38000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD3HF60HDT4 Specifications

Attribute	Attribute Value

Part Number	STGD3HF60HDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW19004703
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	38 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	85 ns
Input Power (Max)	38 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	38000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGD3HF60HDT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 38000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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