STGD5H60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD5H60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8628412
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 10A 83000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD5H60DF Specifications

Attribute	Attribute Value

Part Number	STGD5H60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8628412
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	83 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	134.5 ns
Input Power (Max)	83 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

IGBT Trench Field Stop 600V 10A 83W Surface Mount DPAK

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