STGD5NB120SZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD5NB120SZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8667604
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 1200V 10A 75000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD5NB120SZT4 Specifications

Attribute	Attribute Value

Part Number	STGD5NB120SZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8667604
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	1.20 kV
Current Rating	5.00 A
Power Rating	75 W
Number of Positions	3 Position
Power Dissipation	75 W
Input Capacitance	430 pF
Rise Time	170 ns
Breakdown Voltage (Collector to Emitter)	1200 V
Thermal Resistance	100 ℃/W
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75 W
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in inrush current limitation and pre-heating for electronic lamp ballast. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
Low on-voltage drop
High current capability
Off losses include tail current
High voltage clamping, low VCE (sat) for reduced conduction losses
Tight parameter distribution for design simplification and easy paralleling

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