STGD6NC60HDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD6NC60HDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5233600
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 15A 56000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD6NC60HDT4 Specifications

Attribute	Attribute Value

Part Number	STGD6NC60HDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5233600
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	15.0 A
Number of Positions	3 Position
Power Dissipation	56 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	21 ns
Input Power (Max)	56 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	56000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGD6NC60HDT4 IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 56000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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