STGD8NC60KDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGD8NC60KDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW23669157
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 15A 62000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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STGD8NC60KDT4 Specifications

Attribute	Attribute Value

Part Number	STGD8NC60KDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW23669157
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	62 W
Input Capacitance	380 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	23.5 ns
Input Power (Max)	62 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this STGD8NC60KDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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