STGF10H60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF10H60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12796871
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 20A 30000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

STGF10H60DF Global Supplier

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STGF10H60DF Specifications

Attribute	Attribute Value

Part Number	STGF10H60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12796871
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	107 ns
Input Power (Max)	30 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this STGF10H60DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 30000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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