STGF10NB60SD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF10NB60SD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW37974738
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 23A 25000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

STGF10NB60SD Global Supplier

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STGF10NB60SD Specifications

Attribute	Attribute Value

Part Number	STGF10NB60SD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW37974738
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	25 W
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	460 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	20 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGF10NB60SD is a low drop IGBT with soft and fast recovery diode. This IGBT utilizes the advanced Power MESH™ process featuring extremely low ON-state voltage drop in low-frequency working conditions (up to 1kHz). It is suitable for light dimmer and static relays.
Low on-voltage drop (VCE(sat))
High current capability
Very soft ultrafast recovery anti-parallel diode

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