STGF19NC60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF19NC60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3741471
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 16A 32000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

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STGF19NC60KD Specifications

Attribute	Attribute Value

Part Number	STGF19NC60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3741471
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	32 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	31 ns
Input Power (Max)	32 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	32000 mW
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Size-Width	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGF19NC60KD IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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