STGF20H60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF20H60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW2124400
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 40A 37000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

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STGF20H60DF Specifications

Attribute	Attribute Value

Part Number	STGF20H60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW2124400
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	37 W
Input Capacitance	2750 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	90 ns
Input Power (Max)	37 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	167 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGF20H60DF IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 37000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

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