STGF20NB60S - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF20NB60S
Manufacturer

ST Microelectronics
ChipWorker Part#

CW73474132
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 24A 40000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

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STGF20NB60S Specifications

Attribute	Attribute Value

Part Number	STGF20NB60S
Manufacturer	ST Microelectronics
ChipWorker Part#	CW73474132
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Dissipation	40000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	40 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGF20NB60S IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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