STGF6NC60HD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF6NC60HD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW34497046
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 6A 20000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

STGF6NC60HD Global Supplier

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STGF6NC60HD Specifications

Attribute	Attribute Value

Part Number	STGF6NC60HD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW34497046
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	6.00 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	20 W
Rise Time	5.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	21 ns
Input Power (Max)	20 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	20 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGF6NC60HD is a very fast N-channel PowerMESH™ IGBT for use with SMPS and PFC in both hard switch and resonant topologies. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
Low on voltage drop (Vcesat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultrafast recovery anti-parallel diode
High frequency operation

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