STGP10NB37LZ - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP10NB37LZ
Manufacturer

ST Microelectronics
ChipWorker Part#

CW58655533
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP10NB37LZ Specifications

Attribute	Attribute Value

Part Number	STGP10NB37LZ
Manufacturer	ST Microelectronics
ChipWorker Part#	CW58655533
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Current Rating	20.0 A
Power Dissipation	125000 mW
Continuous Drain Current (Ids)	20.0 A
Breakdown Voltage (Collector to Emitter)	440 V
Input Power (Max)	125 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
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Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
APPLICATIONS
■ AUTOMOTIVE IGNITION

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