STGP10NC60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP10NC60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9402289
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

IGBT Single Transistor, 20A, 2.5V, 60W, 600V, TO-220, 3Pins
Documentation

Datasheet

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STGP10NC60KD Specifications

Attribute	Attribute Value

Part Number	STGP10NC60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9402289
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	20.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	60 W
Rise Time	6.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	65 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STGP10NC60KD is a 600V short-circuit rugged IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in SMPS and PFC in both hard switch and resonant topologies. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
Lower on-voltage drop
Lower CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery anti-parallel diode
10µs Short-circuit withstand time
Low VCE (sat) for reduced conduction losses
Tight parameter distribution for design simplification and easy paralleling

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