STGP15H60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP15H60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW37042136
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 30A 115000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP15H60DF Specifications

Attribute	Attribute Value

Part Number	STGP15H60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW37042136
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Dissipation	115000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	103 ns
Input Power (Max)	115 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	115 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGP15H60DF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 115000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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