STGP19NC60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP19NC60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW2245534
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 35A 125000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP19NC60KD Specifications

Attribute	Attribute Value

Part Number	STGP19NC60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW2245534
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Dissipation	125000 mW
Input Capacitance	1170 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	31 ns
Input Power (Max)	125 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125000 mW
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Size-Width	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Use the STGP19NC60KD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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