STGP19NC60WD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP19NC60WD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW134757774
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 40A 125000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP19NC60WD Specifications

Attribute	Attribute Value

Part Number	STGP19NC60WD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW134757774
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	N-Channel
Power Dissipation	125000 mW
Rise Time	7.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	31 ns
Input Power (Max)	125 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this STGP19NC60WD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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