STGP30M65DF2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP30M65DF2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21951300
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 650V 60A 258000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP30M65DF2 Specifications

Attribute	Attribute Value

Part Number	STGP30M65DF2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21951300
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	258 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	140 ns
Input Power (Max)	258 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	258 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Use the STGP30M65DF2 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 258000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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