STGP3NC120HD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP3NC120HD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW47404672
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 1200V 14A 75000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGP3NC120HD Specifications

Attribute	Attribute Value

Part Number	STGP3NC120HD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW47404672
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	51 ns
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGP3NC120HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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