STGW19NC60WD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW19NC60WD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW83603863
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 42A 125000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW19NC60WD Specifications

Attribute	Attribute Value

Part Number	STGW19NC60WD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW83603863
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	125 W
Rise Time	7 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	31 ns
Input Power (Max)	125 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Use the STGW19NC60WD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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