STGW25M120DF3 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW25M120DF3
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8054811
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 50A 375000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW25M120DF3 Specifications

Attribute	Attribute Value

Part Number	STGW25M120DF3
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8054811
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	375 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	265 ns
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This STGW25M120DF3 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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