STGW30H65FB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW30H65FB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW51542974
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW30H65FB Specifications

Attribute	Attribute Value

Part Number	STGW30H65FB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW51542974
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	260 W
Breakdown Voltage (Collector to Emitter)	650 V
Input Power (Max)	260 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this STGW30H65FB IGBT transistor from STMicroelectronics. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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