STGW30NC60KD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW30NC60KD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9756496
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW30NC60KD Specifications

Attribute	Attribute Value

Part Number	STGW30NC60KD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9756496
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	40 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	24.45 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

You can use this STGW30NC60KD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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