STGW30NC60VD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW30NC60VD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW56251096
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 80A 250000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW30NC60VD Specifications

Attribute	Attribute Value

Part Number	STGW30NC60VD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW56251096
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Polarity	N-Channel
Power Dissipation	250000 mW
Rise Time	11.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	44 ns
Input Power (Max)	250 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Size-Width	5.16 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGW30NC60VD IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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