STGW30NC60WD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW30NC60WD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1484178
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 60A, 2.5V, 200W, 600V, TO-247, 3Pins
Documentation

Datasheet

STGW30NC60WD Global Supplier

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STGW30NC60WD Specifications

Attribute	Attribute Value

Part Number	STGW30NC60WD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1484178
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	60.0 A
Power Rating	200 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Input Capacitance	2080 pF
Rise Time	12.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	50 ℃/W
Reverse recovery time	40 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGW30NC60WD is a 600V Ultra Fast IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in HF, SMPS and PFC in both hard switch and resonant topologies. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
High frequency operation
Lower CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery anti-parallel diode
Low VCE (sat) for reduced conduction losses
Tight parameter distribution for design simplification and easy paralleling

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