STGW35HF60WD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW35HF60WD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11498475
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

STGW35HF60WD Global Supplier

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STGW35HF60WD Specifications

Attribute	Attribute Value

Part Number	STGW35HF60WD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11498475
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	50 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	24.45 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You can use this STGW35HF60WD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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