STGW35NB60SD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW35NB60SD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13097013
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW35NB60SD Specifications

Attribute	Attribute Value

Part Number	STGW35NB60SD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13097013
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	35.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	70.0 A
Rise Time	70 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	44 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGW35NB60SD is a N-channel low drop PowerMESH™ IGBT for use with light dimmer and static relays. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBT. The PowerMESH™ IGBT with outstanding performances.
Low on-voltage drop (VCEsat)
Low input capacitance
High current capability

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