STGW39NC60VD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW39NC60VD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5712833
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 80A, 2.5V, 250W, 600V, TO-247, 3Pins
Documentation

Datasheet

STGW39NC60VD Global Supplier

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STGW39NC60VD Specifications

Attribute	Attribute Value

Part Number	STGW39NC60VD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5712833
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	40.0 A
Power Rating	250 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	250 W
Gate Charge	126 nC
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	40.0 A
Rise Time	13 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	45 ns
Input Power (Max)	250 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequency inverters and induction heating applications. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
Lower CRES/CIES ratio (no cross-conduction susceptibility)
Ultra fast freewheeling diode
Low VCE (sat) for reduced conduction losses
Tight parameter distribution for design simplification and easy paralleling

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