STGW40H120DF2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW40H120DF2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW20108653
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW40H120DF2 Specifications

Attribute	Attribute Value

Part Number	STGW40H120DF2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW20108653
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	468 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	488 ns
Input Power (Max)	468 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	468000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGW40H120DF2 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

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