STGW40M120DF3 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW40M120DF3
Manufacturer

ST Microelectronics
ChipWorker Part#

CW32107329
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

STGW40M120DF3 Global Supplier

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STGW40M120DF3 Specifications

Attribute	Attribute Value

Part Number	STGW40M120DF3
Manufacturer	ST Microelectronics
ChipWorker Part#	CW32107329
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	468 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	355 ns
Input Power (Max)	468 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	468000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGW40M120DF3 is a Trench gate field-stop IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the M series of IGBT, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery anti-parallel diode
10µs Short-circuit withstand time

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