STGW50H60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW50H60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW49416196
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 100A 360000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW50H60DF Specifications

Attribute	Attribute Value

Part Number	STGW50H60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW49416196
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	360 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	55 ns
Input Power (Max)	360 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGW50H60DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 360000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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