STGW50HF60SD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW50HF60SD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW58475633
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 110A, 600V, 284W, 600V, TO-247, 3Pins
Documentation

Datasheet

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STGW50HF60SD Specifications

Attribute	Attribute Value

Part Number	STGW50HF60SD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW58475633
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	284 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	67 ns
Input Power (Max)	284 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	284 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGW50HF60SD is a very low drop IGBT with soft and fast recovery diode. The low drop IGBT based on new advanced planar technology, showing extremely low ON-state voltage and limited turn-OFF losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF
Very low ON-state voltage drop
Low switching off
High current capability
Very soft ultrafast recovery anti-parallel diode

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