STGW50NC60W - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW50NC60W
Manufacturer

ST Microelectronics
ChipWorker Part#

CW75377582
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 100A 285000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW50NC60W Specifications

Attribute	Attribute Value

Part Number	STGW50NC60W
Manufacturer	ST Microelectronics
ChipWorker Part#	CW75377582
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	285000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	285 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	285000 mW
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGW50NC60W IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 285000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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