STGW60H65DFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW60H65DFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW6039736
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW60H65DFB Specifications

Attribute	Attribute Value

Part Number	STGW60H65DFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW6039736
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	375 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	60 ns
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	375 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This STGW60H65DFB IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.

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