STGW60V60F - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW60V60F
Manufacturer

ST Microelectronics
ChipWorker Part#

CW54750696
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 80A 375000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW60V60F Specifications

Attribute	Attribute Value

Part Number	STGW60V60F
Manufacturer	ST Microelectronics
ChipWorker Part#	CW54750696
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	375 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGW60V60F IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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