STGW80V60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW80V60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW31114237
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 120A 469000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW80V60DF Specifications

Attribute	Attribute Value

Part Number	STGW80V60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW31114237
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	469 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	60 ns
Input Power (Max)	469 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	469000 mW
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

This STGW80V60DF IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.

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