STGWA40S120DF3 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWA40S120DF3
Manufacturer

ST Microelectronics
ChipWorker Part#

CW73277893
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 80A, 1.65V, 468W, 1.2kV, TO-247, 3Pins
Documentation

Datasheet

STGWA40S120DF3 Global Supplier

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STGWA40S120DF3 Specifications

Attribute	Attribute Value

Part Number	STGWA40S120DF3
Manufacturer	ST Microelectronics
ChipWorker Part#	CW73277893
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	468 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	355 ns
Input Power (Max)	468 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	468 W
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Size-Length	15.9 mm
Size-Width	5.1 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGWA40S120DF3 is a Trench gate field-stop IGBT for use with industrial drives and welding. This device is an IGBT developed using an advanced proprietary Trench gate field-stop structure. The device is part of the S series of 1200V IGBT which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery anti-parallel diode
10µs Short-circuit withstand time

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