STGWT40H65DFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWT40H65DFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW39946661
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 650V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
Documentation

Datasheet

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STGWT40H65DFB Specifications

Attribute	Attribute Value

Part Number	STGWT40H65DFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW39946661
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	283 W
Input Capacitance	5412 pF
Breakdown Voltage (Collector to Emitter)	650 V
Thermal Resistance	50 ℃/W
Reverse recovery time	62 ns
Input Power (Max)	283 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	283 W
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This fast-switching STGWT40H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.

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