STGWT40V60DLF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWT40V60DLF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW45180262
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 600V 80A 283000mW 3Pin(3+Tab) TO-3P Tube
Documentation

Datasheet

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STGWT40V60DLF Specifications

Attribute	Attribute Value

Part Number	STGWT40V60DLF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW45180262
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	283000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	283 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	283 W
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Size-Length	15.7 mm
Size-Width	5.7 mm
Size-Height	26.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this STGWT40V60DLF IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 283000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

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