STN0214 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STN0214
Manufacturer

ST Microelectronics
ChipWorker Part#

CW20064400
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 NPN 1200V 0.2A
Documentation

Datasheet

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STN0214 Specifications

Attribute	Attribute Value

Part Number	STN0214
Manufacturer	ST Microelectronics
ChipWorker Part#	CW20064400
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	1.6 W
Breakdown Voltage (Collector to Emitter)	1200 V
Continuous Collector Current	0.2A
hFE Min	3
Input Power (Max)	1.6 W
DC Current Gain (hFE)	3
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1600 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.8 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This NPN STN0214 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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