STP10NK60ZFP - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTP10NK60ZFP
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ManufacturerST Microelectronics
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ChipWorker Part#CW1316215
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionPower MOSFET, N Channel, 10A, 600V, 0.65Ω, 10V, 3.75V
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DocumentationDatasheet
Payment Methods and Delivery
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STP10NK60ZFP Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STP10NK60ZFP |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW1316215 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 10.0 A |
| Power Rating | 35 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.65 Ω |
| Polarity | N-Channel |
| Power Dissipation | 35 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 1370 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 1370pF @25V(Vds) |
| Input Power (Max) | 35 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| expand all | |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
Product Description
- The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Zener-protected
Delivery
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Ordering Information
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