STP10NK80Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP10NK80Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10680840
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
Documentation

Datasheet

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STP10NK80Z Specifications

Attribute	Attribute Value

Part Number	STP10NK80Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10680840
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	9.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.78 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	3.75 V
Input Capacitance	2180 pF
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	20 ns
Input Capacitance (Ciss)	2180pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP10NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
Extremely high dV/dt capability
Very low intrinsic capacitance

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