STP11NK50Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP11NK50Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9758528
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 500V 10A
Documentation

Datasheet

STP11NK50Z Global Supplier

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STP11NK50Z Specifications

Attribute	Attribute Value

Part Number	STP11NK50Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9758528
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	10.0 A
Power Rating	125 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	520 mΩ
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	3.75 V
Input Capacitance	1390 pF
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	18 ns
Input Capacitance (Ciss)	1390pF @25V(Vds)
Input Power (Max)	125 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The STP11NK50Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
Extremely high dV/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitances
-55 to 150°C Operating junction temperature range

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