STP11NM60 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP11NM60
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40943897
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 600V, 0.4Ω, 11A, TO-220, TO-220FP MDmesh(TM) Power MOSFET
Documentation

Datasheet

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STP11NM60 Specifications

Attribute	Attribute Value

Part Number	STP11NM60
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40943897
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	11.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.45 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	1000pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching application

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