STP11NM60ND - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP11NM60ND
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12385021
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
Documentation

Datasheet

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STP11NM60ND Specifications

Attribute	Attribute Value

Part Number	STP11NM60ND
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12385021
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.37 Ω
Polarity	N-Channel
Power Dissipation	90 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Rise Time	7 ns
Input Capacitance (Ciss)	850pF @50V(Vds)
Input Power (Max)	90 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
The worldwide best RDS (ON) area amongst the fast recovery diode device
Low gate input resistance

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