STP11NM80 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP11NM80
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5493077
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 800V 11A
Documentation

Datasheet

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STP11NM80 Specifications

Attribute	Attribute Value

Part Number	STP11NM80
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5493077
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	11.0 A
Power Rating	150 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	400 mΩ
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	17 ns
Input Capacitance (Ciss)	1630pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The STP11NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
Low gate input resistance

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