STP12NK30Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP12NK30Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW17381503
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 300V 9A 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

STP12NK30Z Global Supplier

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STP12NK30Z Specifications

Attribute	Attribute Value

Part Number	STP12NK30Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW17381503
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	300 V
Current Rating	9.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.4 Ω
Polarity	N-Channel
Power Dissipation	90 W
Threshold Voltage	3.75 V
Input Capacitance	670 pF
Drain to Source Voltage (Vds)	300 V
Breakdown Voltage (Drain to Source)	300 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	20 ns
Input Capacitance (Ciss)	670pF @25V(Vds)
Input Power (Max)	90 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP12NK30Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of well-established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
0.36R RDS (ON)
Extremely high dV/dt capability
Improved ESD capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
-55 to 150°C Operating junction temperature range

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